BSP318SH6327XTSA1

60V,2.6A N沟道功率MOSFET

SIPMOS® N 通道 MOSFET

得捷:
MOSFET N-CH 60V 2.6A SOT223-4

欧时:
Infineon SIPMOS 系列 Si N沟道 MOSFET BSP318SH6327XTSA1, 2.6 A, Vds=60 V, 3针+焊片 SOT-223封装

贸泽:
MOSFET N-Ch 60V 2.6A SOT-223-3

e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 2.6 A, 0.07 ohm, SOT-223, 表面安装

艾睿:
Increase the current or voltage in your circuit with this BSP318SH6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 1800 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with sipmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 60V 2.6A 4-Pin SOT-223 T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 2.6A; 1.8W; SOT223

Verical:
Trans MOSFET N-CH 60V 2.6A Automotive 4-Pin3+Tab SOT-223 T/R

力源芯城:
60V,2.6A N沟道功率MOSFET

Win Source:
MOSFET N-CH 60V 2.6A