BSP300H6327XUSA1

Infineon SIPMOS 系列 Si N沟道 MOSFET BSP300H6327XUSA1, 190 mA, Vds=800 V, 3针+焊片 SOT-223封装

SIPMOS® N 通道 MOSFET

得捷:
MOSFET N-CH 800V 190MA SOT223-4

立创商城:
N沟道 800V 190mA

欧时:
Infineon SIPMOS 系列 Si N沟道 MOSFET BSP300H6327XUSA1, 190 mA, Vds=800 V, 3针+焊片 SOT-223封装

贸泽:
MOSFET N-Ch 800V 190mA SOT-223-3

e络盟:
晶体管, MOSFET, N沟道, 190 mA, 800 V, 15 ohm, 10 V, 3 V

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The BSP300H6327XUSA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 1800 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with sipmos technology.

安富利:
Trans MOSFET N-CH 800V 0.19A 4-Pin SOT-223 T/R

富昌:
BSP300 系列 800 V 20 Ohm N沟道 SIPMOS® 小信号 晶体管 - PG-SOT-223

Chip1Stop:
Trans MOSFET N-CH 800V 0.19A Automotive 4-Pin3+Tab SOT-223 T/R

TME:
Transistor: N-MOSFET; unipolar; 800V; 0.19A; 1.8W; SOT223

Verical:
Trans MOSFET N-CH 800V 0.19A Automotive 4-Pin3+Tab SOT-223 T/R