BSZ100N03LSGATMA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ100N03LSGATMA1, 40 A, Vds=30 V, 8引脚 TSDSON封装

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 30V 12A/40A 8TSDSON

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ100N03LSGATMA1, 40 A, Vds=30 V, 8引脚 TSDSON封装

贸泽:
MOSFET LV POWER MOS

艾睿:
Make an effective common source amplifier using this BSZ100N03LSGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2100 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R

Chip1Stop:
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP

TME:
Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R

Win Source:
MOSFET N-CH 30V 40A TSDSON-8