BSZ12DN20NS3GATMA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ12DN20NS3GATMA1, 11.3 A, Vds=200 V, 8引脚 TSDSON封装

OptiMOS™3 功率 MOSFET，100V 及以上

得捷:
MOSFET N-CH 200V 11.3A 8TSDSON

立创商城:
N沟道 200V 11.3A

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ12DN20NS3GATMA1, 11.3 A, Vds=200 V, 8引脚 TSDSON封装

e络盟:
晶体管, MOSFET, N沟道, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; BSZ12DN20NS3GATMA1 power MOSFET is for you. Its maximum power dissipation is 50000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R

Chip1Stop:
Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP

TME:
Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R