BSP100,135

SC-73 N-CH 30V 3.2A

VDSS = 30 V

ID = 6 A

RDSON ≤ 100 mΩ VGS = 10 V

RDSON ≤ 200 mΩ VGS = 4.5 V

GENERAL DESCRIPTION

N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.

FEATURES

• ’Trench’ technology

• Low on-state resistance

• Fast switching

• High thermal cycling performance

• Low thermal resistance

Applications:-

• Motor and relay drivers

• d.c. to d.c. converters

• Logic level translator

The BSP100 is supplied in the SOT223 surface mounting package.