BUK9Y4R8-60E

NXP  BUK9Y4R8-60E  晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0029 ohm, 10 V, 1.7 V

The is a N-channel logic level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.

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Repetitive avalanche rated

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Suitable for thermally demanding environments due to 175°C rating

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True logic level gate with VGS th rating of greater than 0.5V at 175°C

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-55 to 175°C Junction temperature range