BC108

MULTICOMP  BC108  单晶体管 双极, 通用, NPN, 25 V, 150 MHz, 600 mW, 200 mA, 110 hFE

The from are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification.

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Collector emitter voltage Vce of 25V

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Continuous collector current Ic of 200mA

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Power dissipation of 600mW

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Operating junction temperature range from -65°C to 200°C

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Collector emitter saturation voltage of 600mV at Ic=100mA

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DC current gain of 40 at Ic=10µA