BGU8M1UKAZ

RF Amp Chip Single Low Noise Amplifier 2200MHz 3.1V 6Pin WLCSP T/R

Overview

The BGU8M1UK is, also known as the LTE1001MC, a Low Noise Amplifier LNA for LTE receiver applications. It comes as an extremely small and thin Wafer Level Chip Scale Package WLCSP. The BGU8M1UK requires one external matching inductor.

The BGU8M1UK adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels it delivers 17 dB gain at a noise figure of 0.7 dB. During high power levels, it temporarily increases its bias current to improve sensitivity.

The BGU8M1UK is optimized for 1805 MHz to 2200 MHz.

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## Features

* Operating frequency from 1805 MHz to 2200 MHz

* Noise figure = 0.7 dB

* Gain = 17 dB

* High input 1 dB compression point of -5 dBm

* High in band IP3i of 3 dBm

* Supply voltage 1.5 V to 3.1 V

* Self shielding package concept

* Integrated supply decoupling capacitor

* Optimized performance at a supply current of 5.0 mA

* Power-down mode current consumption < 1 μA

* Integrated temperature stabilized bias for easy design

* Require only one input matching inductor

* Output DC decoupled

* ESD protection on all pins HBM > 2 kV

* Integrated matching for the output

* Extremely small Wafer Level Chip Scale Package WLCSP 0.65 mm x 0.44 mm x 0.2 mm; 6 solder bumps; 0.22 mm bump pitch

* 180 GHz transit frequency - SiGe:C technology

## Target Applications

* LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules

## Features

* LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules