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BQ4011LYMA-70N

BQ4011LYMA-70N

TI(德州仪器) 电子元器件分类

32Kx8 Nonvolatile SRAM, 3.3V Input, 10% Voltage Tolerance 28-DIP MODULE -40℃ to 85℃

GENERAL DESCRIPON

The CMOS bq4011/Y/LY is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the

unlimited write cycles of standard SRAM.

The control circuitry constantly monitors the single supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation.

FEATURES

• Data Retention for at least 10 Years Without Power

• Automatic Write-Protection During Power-up/Power-down Cycles

• Conventional SRAM Operation, Including Unlimited Write Cycles

• Internal Isolation of Battery before Power Application

• 5-V or 3.3-V Operation

• Industry Standard28-Pin DIP Pinout

BQ4011LYMA-70N中文资料参数规格
技术参数

电源电压DC 3.30 V

存取时间 70 ns

内存容量 32000 B

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压 3V ~ 3.6V

封装参数

引脚数 28

封装 DIP-28

外形尺寸

长度 37.72 mm

宽度 18.42 mm

高度 9.4 mm

封装 DIP-28

物理参数

工作温度 -40℃ ~ 85℃ TA

其他

产品生命周期 Obsolete

包装方式 Tray

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

BQ4011LYMA-70N引脚图与封装图
BQ4011LYMA-70N引脚图

BQ4011LYMA-70N引脚图

BQ4011LYMA-70N封装图

BQ4011LYMA-70N封装图

BQ4011LYMA-70N封装焊盘图

BQ4011LYMA-70N封装焊盘图

在线购买BQ4011LYMA-70N
型号 制造商 描述 购买
BQ4011LYMA-70N TI 德州仪器 32Kx8 Nonvolatile SRAM, 3.3V Input, 10% Voltage Tolerance 28-DIP MODULE -40℃ to 85℃ 搜索库存