BSH202
数据手册.pdf
NXP
恩智浦
分立器件
NXP BSH202 晶体管, MOSFET, P沟道, -520 mA, -30 V, 0.63 ohm, -10 V, -1.9 V
最大源漏极电压VdsDrain-Source Voltage| -30V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| -0.52A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.63Ω @-280mA,-10V 开启电压Vgs（th）Gate-Source Threshold Voltage| -1V 耗散功率PdPower Dissipation| 417mW/0.417W Description & Applications| • Low threshold voltage VDS = -30 V • Fast switching • Logic level compatible ID = -0.52 A • Subminiature surface mountpackage 描述与应用| •低阈值电压VDS=-30 V •快速开关 •逻辑电平兼容ID=-0.52 •表面mountpackage微型
Chip1Stop:
Trans MOSFET P-CH 30V 0.52A 3-Pin TO-236AB
Newark:
# NXP BSH202 MOSFET Transistor, P Channel, -520 mA, -30 V, 0.63 ohm, -10 V, -1.9 V