BSH103,215
数据手册.pdf
NXP
恩智浦
分立器件
NXP BSH103,215 晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV
The BSH103 from is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH103 is designed and qualified for use in high frequency applications, glue logic interface between logic blocks or periphery, computing, battery powered applications.
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- Suitable for use with all 5V logic families
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- Suitable for very low gate drive sources
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- Drain to source voltage Vds of 30V
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- Gate to source voltage of ±8V
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- Drain current Id of 850mA
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- Power dissipation Pd of 750mW
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- Operating junction temperature range from -55°C to 150°C