BUH150G

ON SEMICONDUCTOR  BUH150G  双极晶体管

This NPN general purpose bipolar junction transistor from is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 10 V. Its maximum power dissipation is 150000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 10 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.