BSC900N20NS3GATMA1
数据手册.pdfINFINEON BSC900N20NS3GATMA1 晶体管, MOSFET, N沟道, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V
OptiMOS™3 功率 MOSFET，100V 及以上
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC900N20NS3GATMA1, 15.2 A, Vds=200 V, 8引脚 TDSON封装
得捷:
MOSFET N-CH 200V 15.2A TDSON-8
贸泽:
MOSFET MV POWER MOS
艾睿:
As an alternative to traditional transistors, the BSC900N20NS3GATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 62500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON T/R
TME:
Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP T/R
Newark:
# INFINEON BSC900N20NS3GATMA1 MOSFET Transistor, N Channel, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V