BSZ042N06NSATMA1

INFINEON  BSZ042N06NSATMA1  晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0034 ohm, 10 V, 2.8 V

OptiMOS™5 功率 MOSFET

得捷:
MOSFET N-CH 60V 17A/40A TSDSON

欧时:
Infineon OptiMOS 5 系列 Si N沟道 MOSFET BSZ042N06NSATMA1, 40 A, Vds=60 V, 8引脚 TDSON封装

立创商城:
N沟道 60V 17A 40A

艾睿:
This BSZ042N06NSATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.

TME:
Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R

Newark:
MOSFET Transistor, N Channel, 40 A, 60 V, 0.0034 ohm, 10 V, 2.8 V