BD536

STMICROELECTRONICS  BD536  单晶体管 双极, PNP, 60 V, 50 W, -6 A, 40 hFE

Description

The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD534 and .

Features

■ BD533, BD535, and BD537 are NPN transistors

得捷:
TRANS PNP 60V 8A TO220

贸泽:
双极晶体管 - 双极结型晶体管BJT NPN Medium Power

e络盟:
STMICROELECTRONICS  BD536  单晶体管 双极, PNP, 60 V, 50 W, -6 A, 40 hFE

艾睿:
Implement this PNP BD536 GP BJT from STMicroelectronics to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 50000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

安富利:
Trans GP BJT PNP 60V 8A 3-Pin3+Tab TO-220 Tube

Chip1Stop:
Trans GP BJT PNP 60V 8A 3-Pin3+Tab TO-220 Tube

Win Source:
TRANS PNP 60V 8A TO-220