BSO613SPVGHUMA1

INFINEON  BSO613SPVGHUMA1  晶体管, MOSFET, P沟道, -3.44 A, -60 V, 0.11 ohm, -10 V, -3 V 新

SIPMOS® P 通道 MOSFET

**Infineon** SIPMOS® 小信号 P 通道 MOSFET 具有多种功能，可能包括增强模式、连续漏极电流（约低至 80A）及宽工作温度范围。 SIPMOS 功率可用于多种应用，包括电信、eMobility、笔记本、直流/直流设备以及汽车工业。

· 符合 AEC Q101 标准（请参阅数据表）

· 无铅引线电镀，符合 RoHS 标准

得捷:
MOSFET P-CH 60V 3.44A 8DSO

欧时:
Infineon SIPMOS 系列 Si P沟道 MOSFET BSO613SPVGHUMA1, 3.4 A, Vds=60 V, 8引脚 SOIC封装

贸泽:
MOSFET P-Ch -60V -3.44A DSO-8

e络盟:
功率场效应管, MOSFET, P沟道, 60 V, 3.44 A, 0.11 ohm, PG-SO, 表面安装

艾睿:
Use Infineon Technologies&s; BSO613SPVGHUMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes sipmos technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET P-CH 60V 3.44A 8-Pin DSO T/R

富昌:
P-沟道 60 V 3.44 A 0.13 Ω 20 nC 表面贴装 SipMOS 功率 晶体管 - SOIC-8

TME:
Transistor: P-MOSFET; unipolar; -60V; -3.44A; 2.5W; PG-DSO-8

Verical:
Trans MOSFET P-CH 60V 3.44A Automotive 8-Pin DSO T/R

Newark:
# INFINEON  BSO613SPVGHUMA1  MOSFET, P-CH, -60V, -3.44A, PG-SO-8 New