BSC057N03MSGATMA1
数据手册.pdfN沟道 30V 15A 71A
表面贴装型 N 通道 30 V 15A(Ta),71A(Tc) 2.5W(Ta),45W(Tc) PG-TDSON-8-5
得捷:
MOSFET N-CH 30V 15A/71A TDSON
立创商城:
N沟道 30V 71A 15A
贸泽:
MOSFET LV POWER MOS
艾睿:
This BSC057N03MSGATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 30V 15A 8-Pin TDSON T/R
TME:
Transistor: N-MOSFET; unipolar; 30V; 71A; 45W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 30V 15A 8-Pin TDSON EP T/R
Win Source:
MOSFET N-CH 30V 71A TDSON-8