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BCV48E6327HTSA1

BCV48E6327HTSA1

数据手册.pdf
Infineon(英飞凌) 分立器件

SOT-89 PNP 60V 0.5A

Thanks to Technologies" PNP Darlington transistor, you can easily amplify a current and output a much higher current gain value within your circuit. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 2000@10uA@1 V|4000@10mA@5V|10000@100mA@5V|2000@0.5A@5V. It has a maximum collector emitter saturation voltage of 1@0.1mA@100mA V. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.5@0.1mA@100mA V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 10 V.

BCV48E6327HTSA1中文资料参数规格
技术参数

极性 PNP

耗散功率 1 W

击穿电压集电极-发射极 60 V

集电极最大允许电流 0.5A

最小电流放大倍数hFE 10000 @100mA, 5V

额定功率Max 1 W

工作温度Max 150 ℃

工作温度Min -65 ℃

增益带宽 200 MHz

耗散功率Max 1000 mW

封装参数

安装方式 Surface Mount

引脚数 4

封装 SOT-89

外形尺寸

高度 1.5 mm

封装 SOT-89

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

BCV48E6327HTSA1引脚图与封装图
暂无图片
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型号 制造商 描述 购买
BCV48E6327HTSA1 Infineon 英飞凌 SOT-89 PNP 60V 0.5A 搜索库存
替代型号BCV48E6327HTSA1
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: BCV48E6327HTSA1

品牌: Infineon 英飞凌

封装: SOT-89 PNP 1000mW

当前型号

SOT-89 PNP 60V 0.5A

当前型号

型号: BCV48,115

品牌: 恩智浦

封装: SOT-89 PNP 1300mW

功能相似

NXP  BCV48,115  单晶体管 双极, PNP, -60 V, 220 MHz, 1.3 W, -500 mA, 2000 hFE

BCV48E6327HTSA1和BCV48,115的区别