BSL308CH6327XTSA1
数据手册.pdf双路场效应管, MOSFET, N和P, 2.3 A, 30 V, 0.044 ohm, 10 V, 1.6 V
Summary of Features:
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- Complementary p- + n-channel
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- Enhancement mode
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- Avalanche rated
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- Qualified according to AEC Q101
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- 100% lead-free; RoHS compliant
得捷:
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
欧时:
Infineon MOSFET BSL308CH6327XTSA1
立创商城:
1个N沟道和1个P沟道 30V 2.3A 2A
e络盟:
双路场效应管, MOSFET, 互补N与P沟道, 30 V, 2.3 A, 0.044 ohm, TSOP, 表面安装
艾睿:
Increase the current or voltage in your circuit with this BSL308CH6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N|P channel MOSFET transistor operates in enhancement mode. This device utilizes optimos p3|optimos 2 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH/P-CH 30V/30V 2.3A/2A 6-Pin TSOP T/R
TME:
Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.3/-2A; 0.5W
Verical:
Trans MOSFET N/P-CH 30V 2.3A/2A Automotive 6-Pin TSOP T/R
Win Source:
MOSFET N/P-CH 30V 2.3A/2A 6TSOP