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BSL308CH6327XTSA1

BSL308CH6327XTSA1

数据手册.pdf
Infineon(英飞凌) 分立器件

双路场效应管, MOSFET, N和P, 2.3 A, 30 V, 0.044 ohm, 10 V, 1.6 V

Summary of Features:

.
Complementary p- + n-channel
.
Enhancement mode
.
Avalanche rated
.
Qualified according to AEC Q101
.
100% lead-free; RoHS compliant

得捷:
MOSFET N/P-CH 30V 2.3A/2A 6TSOP


欧时:
Infineon MOSFET BSL308CH6327XTSA1


立创商城:
1个N沟道和1个P沟道 30V 2.3A 2A


e络盟:
双路场效应管, MOSFET, 互补N与P沟道, 30 V, 2.3 A, 0.044 ohm, TSOP, 表面安装


艾睿:
Increase the current or voltage in your circuit with this BSL308CH6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N|P channel MOSFET transistor operates in enhancement mode. This device utilizes optimos p3|optimos 2 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.


安富利:
Trans MOSFET N-CH/P-CH 30V/30V 2.3A/2A 6-Pin TSOP T/R


TME:
Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.3/-2A; 0.5W


Verical:
Trans MOSFET N/P-CH 30V 2.3A/2A Automotive 6-Pin TSOP T/R


Win Source:
MOSFET N/P-CH 30V 2.3A/2A 6TSOP


BSL308CH6327XTSA1中文资料参数规格
技术参数

额定功率 0.5 W

针脚数 6

漏源极电阻 0.044 Ω

极性 N+P

耗散功率 0.5 W

阈值电压 1.6 V

漏源极电压Vds 30 V

连续漏极电流Ids 2.3A/2A

输入电容Ciss 275pF @15VVds

额定功率Max 500 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 500 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 TSOP-6-6

外形尺寸

封装 TSOP-6-6

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Onboard charger

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

BSL308CH6327XTSA1引脚图与封装图
暂无图片
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