BSR606NH6327XTSA1

INFINEON  BSR606NH6327XTSA1  晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.045 ohm, 10 V, 1.8 V 新

表面贴装型 N 通道 2.3A（Ta） 500mW（Ta） PG-SC-59

得捷:
MOSFET N-CH 60V 2.3A SC59

贸泽:
MOSFET N-Ch 60V 2.3A SOT-23-3

e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 2.3 A, 0.045 ohm, SC-59, 表面安装

艾睿:
Compared to traditional transistors, BSR606NH6327XTSA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
SMALL SIGNAL+P-CH

TME:
Transistor: N-MOSFET; unipolar; 60V; 2.3A; 0.5W; PG-SC59

Verical:
Trans MOSFET N-CH 60V 2.3A Automotive 3-Pin SC-59 T/R

Newark:
# INFINEON  BSR606NH6327XTSA1  MOSFET, N-CH, 60V, 2.3A, SC-59-3 New

Win Source:
MOSFET N-CH 60V 2.3A SC59