BFR193FH6327XTSA1
数据手册.pdfInfineon(英飞凌)
分立器件
晶体管 双极-射频, NPN, 12 V, 8 GHz, 580 mW, 80 mA, 70 hFE
Summary of Features:
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- For low noise, high-gain amplifiers up to 2 GHz
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- For linear broadband amplifiers
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- fT = 8 GHz, NFmin = 1 dB at 900 MHz
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- Pb-free RoHS compliant and halogen-free WEEE compliant product
欧时:
Infineon BFR193FH6327XTSA1
得捷:
RF TRANS NPN 12V 8GHZ TSFP-3
贸泽:
射频RF双极晶体管 RF BIP TRANSISTOR
e络盟:
晶体管 双极-射频, NPN, 12 V, 8 GHz, 580 mW, 80 mA, 70 hFE
艾睿:
In addition to offering the benefits of traditional BJTs, the BFR193FH6327XTSA1 RF amplifier from Infineon Technologies is perfect for high radio frequency power situations. This RF transistor has an operating temperature range of -55 °C to 150 °C.
Chip1Stop:
Trans GP BJT NPN 12V 0.08A 3-Pin TSFP T/R
Verical:
Trans RF BJT NPN 12V 0.08A Automotive 3-Pin TSFP T/R
Win Source:
TRANS RF NPN 12V 80MA TSFP-3