BCM856SH6327XTSA1

BCM856S 系列 PNP 65 V 100 mA 硅 AF 晶体管 阵列 - SOT-363-6

双匹配双极，

得捷:
TRANS 2PNP 65V 0.1A SOT363

欧时:
Infineon BCM856SH6327XTSA1, 双 PNP 晶体管, 100 mA, Vce=65 V, HFE:200, 250 MHz, 6引脚 SOT-363 SC-88封装

贸泽:
Bipolar Transistors - BJT AF TRANSISTOR

艾睿:
Implement this versatile PNP BCM856SH6327XTSA1 GP BJT from Infineon Technologies into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

安富利:
Trans GP BJT PNP 65V 0.1A 6-Pin SOT-363 T/R

Chip1Stop:
Trans GP BJT PNP 65V 0.1A Automotive 6-Pin SOT-363 T/R

Verical:
Trans GP BJT PNP 65V 0.1A 250mW Automotive 6-Pin SOT-363 T/R

Win Source:
TRANS 2PNP 65V 0.1A SOT363