BCV62CE6327HTSA1
数据手册.pdfBCV62 系列 PNP 30 V 100 mA 表面贴装 硅 双 晶体管 - SOT-143-4
通用 PNP ，
得捷:
TRANS 2PNP 30V 0.1A SOT143
欧时:
Infineon BCV62CE6327HTSA1, 双 PNP 电流镜像晶体管, 100 mA, Vce=30 V, HFE:100, 250 MHz, 4引脚 SOT-143封装
艾睿:
Design various electronic circuits with this versatile PNP BCV62CE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V.
Chip1Stop:
Trans GP BJT PNP 30V 0.1A Automotive 4-Pin3+Tab SOT-143 T/R
Verical:
Trans GP BJT PNP 30V 0.1A Automotive 4-Pin3+Tab SOT-143 T/R
Newark:
# INFINEON BCV62CE6327HTSA1 Bipolar BJT Array Transistor, PNP, 30 V, 300 mW, 100 mA, 520, SOT-143
Win Source:
TRANS 2PNP 30V 0.1A SOT143
