BCR503E6327HTSA1

Infineon BCR503E6327HTSA1 NPN 数字晶体管, 500 mA, Vce=50 V, 2.2 kΩ, 电阻比:1, 3引脚 SOT-23封装

双电阻器数字，

Infineon 的一系列双极性结点晶体，配有集成电阻器，允许直接从数字来源驱动，无需其他元件。 双电阻器设备具有串行输入电阻器和连接晶体管基座与发射器的电阻器。

得捷:
TRANS PREBIAS NPN 50V SOT23-3

欧时:
Infineon BCR503E6327HTSA1 NPN 数字晶体管, 500 mA, Vce=50 V, 2.2 kΩ, 电阻比:1, 3引脚 SOT-23封装

贸泽:
Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 500MA

艾睿:
If you require the digital form of a traditional BJT for your signal processing needs, then the NPN BCR503E6327HTSA1 digital transistor from Infineon Technologies is for you. This product&s;s maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 40@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.

Chip1Stop:
Trans Digital BJT NPN 50V 500mA Automotive 3-Pin SOT-23 T/R

Verical:
Trans Digital BJT NPN 50V 500mA 330mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS PREBIAS NPN 300MW SOT23-3