BCR583E6327HTSA1

Infineon BCR583E6327HTSA1 PNP 数字晶体管, 500 mA, Vce=50 V, 10 kΩ, 电阻比:1, 3引脚 SOT-23封装

双电阻器数字，

Infineon 的一系列双极性结点晶体，配有集成电阻器，允许直接从数字来源驱动，无需其他元件。 双电阻器设备具有串行输入电阻器和连接晶体管基座与发射器的电阻器。

得捷:
TRANS PREBIAS PNP 0.33W SOT23-3

欧时:
Infineon BCR583E6327HTSA1 PNP 数字晶体管, 500 mA, Vce=50 V, 10 kΩ, 电阻比:1, 3引脚 SOT-23封装

艾睿:
Infineon Technologies&s; PNP BCR583E6327HTSA1 digital transistor is the ideal component to use in situations where digital signal processing is required. This product&s;s maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 70@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 330 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It is made in a single configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

Verical:
Trans Digital BJT PNP 50V 500mA 330mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS PREBIAS PNP 0.33W SOT23-3