BCR553E6327HTSA1

双极晶体管 - 预偏置 PNP Silicon Digital TRANSISTOR

Summary of Features:

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Built in bias resistor R1= 2.2 kΩ, R2= 2.2 kΩ

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Pb-free RoHS compliant package

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Qualified according AEC Q101

得捷:
TRANS PREBIAS PNP 300MW SOT23-3

立创商城:
BCR553E6327HTSA1

贸泽:
双极晶体管 - 预偏置 PNP Silicon Digital TRANSISTOR

艾睿:
Are you looking to build a digital signal processing device? The PNP BCR553E6327HTSA1 digital transistor, developed by Infineon Technologies, can provide a solution. This product&s;s maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 40@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. Its maximum power dissipation is 330 mW. It has a maximum collector emitter voltage of 50 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This transistor has an operating temperature range of -65 °C to 150 °C.

安富利:
Trans Digital BJT PNP 50V 500mA 3-Pin SOT-23 T/R

Verical:
Trans Digital BJT PNP 50V 500mA 330mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS PREBIAS PNP 300MW SOT23-3