BFU630F,115
数据手册.pdfNXP(恩智浦)
分立器件
晶体管 双极-射频, NPN, 5.5 V, 21 GHz, 200 mW, 30 mA, 90 hFE
BFU630F NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.- .
- 40 GHz fT silicon technology * High maximum stable gain 26 dB at 1.8 GHz * Low noise high gain microwave transistor * Noise figure NF = 0.85 dB at 2.4 GHz
得捷:
RF TRANS NPN 5.5V 21GHZ 4DFP
贸泽:
射频RF双极晶体管 Single NPN 21GHz
艾睿:
Trans RF BJT NPN 5.5V 0.03A 200mW 4-Pin3+Tab DFP T/R
Chip1Stop:
Trans GP BJT NPN 5.5V 0.03A 4-Pin3+Tab DFP T/R
Verical:
Trans RF BJT NPN 5.5V 0.03A 200mW 4-Pin3+Tab DFP T/R
RfMW:
Transistor
DeviceMart:
TRANSISTOR NPN SOT343F-4
Win Source:
TRANSISTOR NPN SOT343F-4