BFU660F,115

晶体管 双极-射频, NPN, 5.5 V, 21 GHz, 225 mW, 60 mA, 90 hFE

BFU660F NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

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40 GHz fT silicon technology * High output third-order intercept point 27 dBm at 1.8 GHz * Low noise high linearity RF transistor

得捷:
RF TRANS NPN 5.5V 21GHZ 4DFP

贸泽:
射频RF双极晶体管 Single NPN 21GHz

艾睿:
Trans RF BJT NPN 5.5V 0.06A 225mW 4-Pin3+Tab DFP T/R

安富利:
Trans GP BJT NPN 5.5V 0.06A 4-Pin3+Tab DFP T/R

Verical:
Trans RF BJT NPN 5.5V 0.06A 225mW 4-Pin DFP T/R

RfMW:
Transistor

DeviceMart:
TRANSISTOR NPN SOT343F-4