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BCR196E6327HTSA1

BCR196E6327HTSA1

数据手册.pdf
Infineon(英飞凌) 分立器件

Infineon BCR196E6327HTSA1 PNP 数字晶体管, Vce=50 V, 47 kΩ, 电阻比:2.13, 3引脚 SOT-23封装

双电阻器数字,

Infineon 的一系列双极性结点晶体,配有集成电阻器,允许直接从数字来源驱动,无需其他元件。 双电阻器设备具有串行输入电阻器和连接晶体管基座与发射器的电阻器。


得捷:
TRANS PREBIAS PNP 200MW SOT23-3


立创商城:
1个PNP-预偏置 70mA 50V


欧时:
Infineon BCR196E6327HTSA1 PNP 数字晶体管, Vce=50 V, 47 kΩ, 电阻比:2.13, 3引脚 SOT-23封装


贸泽:
双极晶体管 - 预偏置 AF DIGITAL TRANSISTORS


艾睿:
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this PNP BCR196E6327HTSA1 digital transistor from Infineon Technologies, ideal for any digital signal processing circuit! This product&s;s maximum continuous DC collector current is 70 mA, while its minimum DC current gain is 50@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.


Verical:
Trans Digital BJT PNP 50V 70mA 200mW Automotive 3-Pin SOT-23 T/R


BCR196E6327HTSA1中文资料参数规格
技术参数

额定电压DC -50.0 V

额定电流 -70.0 mA

极性 PNP

耗散功率 0.2 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 70mA

最小电流放大倍数hFE 50 @5mA, 5V

额定功率Max 200 mW

工作温度Max 150 ℃

工作温度Min -65 ℃

增益带宽 150 MHz

耗散功率Max 200 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

长度 2.9 mm

宽度 1.3 mm

高度 0.9 mm

封装 SOT-23-3

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

BCR196E6327HTSA1引脚图与封装图
暂无图片
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BCR196E6327HTSA1 Infineon 英飞凌 Infineon BCR196E6327HTSA1 PNP 数字晶体管, Vce=50 V, 47 kΩ, 电阻比:2.13, 3引脚 SOT-23封装 搜索库存