BCR142E6327HTSA1
数据手册.pdf单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
双电阻器数字，
Infineon 的一系列双极性结点晶体，配有集成电阻器，允许直接从数字来源驱动，无需其他元件。 双电阻器设备具有串行输入电阻器和连接晶体管基座与发射器的电阻器。
得捷:
TRANS PREBIAS NPN 0.2W SOT23-3
欧时:
Infineon BCR142E6327HTSA1 NPN 数字晶体管, 100 mA, Vce=50 V, 22 kΩ, 电阻比:0.47, 3引脚 SOT-23封装
艾睿:
Ensure the proper transistor is used within your digital processing unit by using Infineon Technologies&s; NPN BCR142E6327HTSA1 digital transistor. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.
Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R
Verical:
Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R
Win Source:
TRANS PREBIAS NPN 0.2W SOT23-3