BC848C RF

NPN 晶体管，Taiwan Semiconductor### 双极晶体管，Taiwan Semiconductor

小信号 NPN ，

### 双极晶体管，Taiwan Semiconductor

欧时:
Taiwan Semiconductor BC848C RF , NPN 晶体管, 100 mA, Vce=30 V, HFE:420, 3引脚 SOT-23封装

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BC848C RF GP BJT from Taiwan Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

Allied Electronics:
Transistor NPN 30V 100mA 200mW SOT23

Verical:
Trans GP BJT NPN 30V 0.1A 3-Pin SOT-23 T/R