BCR129SH6327XTSA1
数据手册.pdf单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
单电阻器数字，
得捷:
TRANS 2NPN PREBIAS 0.25W SOT363
立创商城:
2个NPN-预偏置 100mA 50V
欧时:
Infineon BCR129SH6327XTSA1 双 NPN 数字晶体管, Vce=50 V, 10 kΩ, 电阻比:无, 6引脚 SOT-363 SC-88封装
艾睿:
If you are building a digital signal processing device, make sure to use Infineon Technologies&s; NPN BCR129SH6327XTSA1 digital transistor&s;s within your circuit! This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 120@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a dual configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
安富利:
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R
Win Source:
TRANS 2NPN PREBIAS 0.25W SOT363