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AM29LV017B-120EC

数据手册.pdf
AMD 超微半导体 主动器件

NOR Flash Parallel 3.3V 16M-bit 2M x 8 120ns 40Pin TSOP

GENERAL DESCRIPTION

The Am29LV017B is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes. The device is offered in 48-ball FBGA and 40-pin TSOP packages. The byte-wide x8 data appears on DQ7–DQ0. All read, program, and erase operations are accomplished using only a single power supply. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

   — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

   — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors

■ Manufactured on 0.35 µm process technology

■ High performance

   — Full voltage range: access times as fast as 90 ns

   — Regulated voltage range: access times as fast as 80 ns

■ Ultra low power consumption typical values at 5 MHz

   — 200 nA Automatic Sleep mode current

   — 200 nA standby mode current

   — 9 mA read current

   — 15 mA program/erase current

■ Flexible sector architecture

   — Thirty-two 64 Kbyte sectors

   — Supports full chip erase

   — Sector Protection features:

      A hardware method of locking a sector to prevent any program or erase operations within that sector

      Sectors can be locked in-system or via programming equipment

      Temporary Sector Unprotect feature allows code changes in previously locked sectors

■ Unlock Bypass Program Command

   — Reduces overall programming time when issuing multiple program command sequences

■ Embedded Algorithms

   — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors

   — Embedded Program algorithm automatically writes and verifies data at specified addresses

■ Minimum 1,000,000 write cycle guarantee per sector

■ Package option

   — 48-ball FBGA

   — 40-pin TSOP

■ CFI Common Flash Interface compliant

   — Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices

■ Compatibility with JEDEC standards

   — Pinout and software compatible with single power supply Flash

   — Superior inadvertent write protection

■ Data# Polling and toggle bits

   — Provides a software method of detecting program or erase operation completion

■ Ready/Busy# pin RY/BY#

   — Provides a hardware method of detecting program or erase cycle completion

■ Erase Suspend/Erase Resume

   — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation

■ Hardware reset pin RESET#

   — Hardware method to reset the device to reading array data

AM29LV017B-120EC中文资料参数规格
封装参数

封装 SOP

外形尺寸

封装 SOP

其他

产品生命周期 Obsolete

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

AM29LV017B-120EC引脚图与封装图
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型号 制造商 描述 购买
AM29LV017B-120EC AMD 超微半导体 NOR Flash Parallel 3.3V 16M-bit 2M x 8 120ns 40Pin TSOP 搜索库存
替代型号AM29LV017B-120EC
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: AM29LV017B-120EC

品牌: AMD 超微半导体

封装: SOP

当前型号

NOR Flash Parallel 3.3V 16M-bit 2M x 8 120ns 40Pin TSOP

当前型号

型号: AM29LV017D-120EC

品牌: 超微半导体

封装:

功能相似

16 Megabit 2M x 8Bit CMOS 3V-only Uniform Sector Flash Memory

AM29LV017B-120EC和AM29LV017D-120EC的区别

型号: AM29LV017D-120EI

品牌: 超微半导体

封装:

功能相似

16 Megabit 2M x 8Bit CMOS 3V-only Uniform Sector Flash Memory

AM29LV017B-120EC和AM29LV017D-120EI的区别