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ADUM4121ARIZ

ADUM4121ARIZ

数据手册.pdf
ADI(亚德诺) 主动器件

閘極驅動器 Iso Gate Drvr w/Miller clamp w/TSD

Product Details

The ADuM4121/ADuM4121-1 are 2 A isolated, single-channel drivers that employ Analog Devices, Inc.’s iCoupler® technology to provide precision isolation. The ADuM4121/ADuM4121-1 provide 5 kV rms isolation in the wide-body, 8-lead SOIC package. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to alternatives such as the combination of pulse transformers and gate drivers.

The ADuM4121/ADuM4121-1 operate with an input supply ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers that employ high voltage level translation methodologies, the ADuM4121/ ADuM4121-1 offer the benefit of true, galvanic isolation between the input and the output.

The ADuM4121/ADuM4121-1 include an internal Miller clamp that activates at 2 V on the falling edge of the gate drive output, supplying the driven gate with a lower impedance path to reduce the chance of Miller capacitance induced turn on.

Options exists to allow the thermal shutdown to be enabled or disabled. As a result, the ADuM4121/ADuM4121-1 provide reliable control over the switching characteristics of insulated gate bipolar transistor IGBT/metal oxide semiconductor field, effect transistor MOSFET configurations over a wide range of switching voltages.

Applications

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Switching power supplies
.
Isolated IGBT/MOSFET gate drives
.
Industrial inverters
.
Gallium nitride GaN/silicon carbide SiC power devices

### Features and Benefits

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2 A peak output current <2 Ω RDSON
.
2.5 V to 6.5 V input 
.
4.5 V to 35 V output 
.
Undervoltage lockout UVLO at 2.5 V VDD1 
.
Multiple UVLO options on VDD2
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Grade A: 4.4 V typical UVLO on VDD2
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Grade B: 7.3 V typical UVLO on VDD2
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Grade C: 11.3 V typical UVLO on VDD2
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Precise timing characteristics
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53 ns maximum isolator and driver propagation delay
.
CMOS input logic levels
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High common-mode transient immunity: >150 kV/µs
.
High junction temperature operation: 125°C
.
Default low output
.
Internal Miller clamp
.
Safety and regulatory approvals pending 
.
UL recognition per UL 1577 
.
5 kV rms for 1 minute SOIC long package
.
CSA Component Acceptance Notice 5A
.
VDE certificate of conformity pending
.
DIN V VDE V 0884-10 VDE V 0884-10: 2006-12
.
VIORM = 849 V peak
.
Wide body, 8-lead SOIC
ADUM4121ARIZ中文资料参数规格
技术参数

上升/下降时间 18 ns

输出接口数 1

通道数 1

耗散功率 1200 mW

隔离电压 5000 Vrms

下降时间Max 18 ns

上升时间Max 18 ns

工作温度Max 125 ℃

工作温度Min -40 ℃

耗散功率Max 1200 mW

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -40℃ ~ 125℃

其他

产品生命周期 Active

包装方式 Tube

制造应用 Instrumentati, Automotive, Wireless Infrastructure, Solar Inverters, Energy, Intelligent Battery Systems, |Instrumentation and Measurement, Wind Turbines, Communications, Energy Storage, Coupler Technology, Battery Testing and Formation, Motor Control, Hybrid Electric Vehicles, Aerospace and Defense

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

海关信息

ECCN代码 EAR99

ADUM4121ARIZ引脚图与封装图
ADUM4121ARIZ引脚图

ADUM4121ARIZ引脚图

ADUM4121ARIZ封装图

ADUM4121ARIZ封装图

ADUM4121ARIZ电路图

ADUM4121ARIZ电路图

ADUM4121ARIZ封装焊盘图

ADUM4121ARIZ封装焊盘图

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