ACS10DMSR

抗辐射三重三输入与非门 Radiation Hardened Triple Three-Input NAND Gate

Description

The ACS10MS is a radiation hardened triple three-input NAND gate. A high on all inputs forces the output to a low state. The ACS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS Logic Family.

Features

• 1.25 Micron Radiation Hardened SOS CMOS

• Total Dose 300K RAD Si

• Single Event Upset SEU Immunity <1 x 10-10 Errors/Bit-Day Typ

• SEU LET Threshold >80 MEV-cm2/mg

• Dose Rate Upset >1011 RAD Si/s, 20ns Pulse

• Latch-Up Free Under Any Conditions

• Military Temperature Range: -55oC to +125oC

• Significant Power Reduction Compared to ALSTTL Logic

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

\- VIL = 30% of VCC Max

\- VIH = 70% of VCC Min

• Input Current≤1µA at VOL, VOH