A2G22S160-01SR3

RF Power Transistor,1800 to 2200MHz, 125W, Typ Gain in dB is 19.6 @ 2110MHz, 48V, GaN, SOT1828

Overview

The 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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## Features

* High Terminal Impedances for Optimal Broadband Performance

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

## Features RF Performance Tables

### 2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 150 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

2110 MHz| 19.6| 38.0| 7.2| –30.3| –20

2140 MHz| 19.9| 38.3| 7.1| –30.0| –23

2170 MHz| 20.0| 39.0| 7.1| –29.7| –19

### 1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 150 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1805 MHz| 18.2| 36.9| 7.1| –33.4| –11

1840 MHz| 18.5| 37.4| 7.1| –33.0| –16

1880 MHz| 18.6| 38.2| 7.0| –32.5| –16