A2T18H160-24SR3
数据手册.pdfNXP(恩智浦)
分立器件
RF Power Transistor,1805 to 1880MHz, 126W, Typ Gain in dB is 17.9 @ 1805MHz, 28V, LDMOS, SOT1799
Overview
The 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
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## Features
* Advanced High Performance In-Package Doherty
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems
* RoHS Compliant
## Features RF Performance Table
### 1800 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.65 Vdc, Pout = 28 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- *
\---|---|---|---|---
1805 MHz| 17.9| 49.9| 7.7| –32.0
1840 MHz| 17.8| 49.3| 7.7| –33.8
1880 MHz| 17.8| 50.2| 7.8| –34.7