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A2T23H160-24SR3

数据手册.pdf
NXP(恩智浦) 主动器件

RF Power Transistor,2300 to 2400MHz, 120W, Typ Gain in dB is 17.7 @ 2300MHz, 28V, LDMOS, SOT1799

Overview

The 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.

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## Features

* Advanced High Performance In-Package Doherty

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

## Features RF Performance Table

### 2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 350 mA, VGSB = 0.7 Vdc, Pout = 28 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
*

\---|---|---|---|---

2300 MHz| 17.7| 48.8| 7.9| –33.5

2350 MHz| 17.7| 48.4| 8.0| –37.2

2400 MHz| 17.8| 48.2| 7.9| –37.0

A2T23H160-24SR3中文资料参数规格
技术参数

频率 2.3 GHz

输出功率 28 W

增益 17.7 dB

测试电流 350 mA

额定电压 65 V

电源电压 28 V

封装参数

封装 NI-780S-4L2L

外形尺寸

封装 NI-780S-4L2L

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

A2T23H160-24SR3引脚图与封装图
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型号 制造商 描述 购买
A2T23H160-24SR3 NXP 恩智浦 RF Power Transistor,2300 to 2400MHz, 120W, Typ Gain in dB is 17.7 @ 2300MHz, 28V, LDMOS, SOT1799 搜索库存