AFT27S006NT1

晶体管, 射频FET, 65 V, 728 MHz, 3700 MHz, PLD-1.5W

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * Universal Broadband Driver * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.

得捷:
RF MOSFET LDMOS 28V PLD1.5W

立创商城:
AFT27S006NT1

e络盟:
晶体管, 射频FET, 65 V, 728 MHz, 3700 MHz, PLD-1.5W

艾睿:
Trans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R

安富利:
Trans MOSFET N-CH 65V 2-Pin PLD-1.5W T/R

Chip1Stop:
RF MOSFET

Verical:
Trans RF FET N-CH 65V 3-Pin PLD-1.5W T/R

RfMW:
RF Power Transistor, 0.10 to 3.6 GHz, 6 W, Typ Gain in dB is 22.5 @ 2170 MHz, 28 V, LDMOS, SOT1811-2