AO4932
数据手册.pdfSOIC N-CH 30V 11A/8A
General Description
The uses advanced trench technology to provide excellent RDSON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further.
Product Summary
FET1N-Channel FET2N-Channel
VDS = 30V 30V
ID= 11A VGS=10V 8A VGS=10V
RDSON RDSON
< 12.5mΩVGS=10V < 19mΩVGS=10V
< 15mΩVGS=4.5V < 23mΩVGS=4.5V
100% UIS Tested 100% UIS Tested
100% Rg Tested 100% Rg Tested