AFT20P140-4WNR3

RF Power Transistor,1880 to 2025MHz, 130W, Typ Gain in dB is 17.6 @ 2025MHz, 28V, LDMOS, SOT1818

Overview

The and AFT20P140-4WGNR3 24 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025 MHz.

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## Features

* Designed for Wide Instantaneous Bandwidth Applications

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

## Features RF Performance Table

### 2025 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 500 mA, VGSB = 0.6 Vdc, Pout = 24 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

1880 MHz| 17.8| 41.7| 7.7| –31.0

1960 MHz| 17.8| 41.7| 7.7| –33.7

2025 MHz| 17.6| 41.2| 7.8| –34.0