AFT18S290-13SR3
数据手册.pdfRF Power Transistor,1805 to 1995MHz, 263W, Typ Gain in dB is 18.2 @ 1960MHz, 28V, LDMOS, SOT1801
Overview
The 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.
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## Features
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems
* Optimized for Doherty Applications
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13-inch Reel.
## Features RF Performance Tables
### 1900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 63 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- * | **IRL
- .
- *
\---|---|---|---|---|---
1930 MHz| 18.0| 31.2| 7.1| –36.0| –19
1960 MHz| 18.2| 31.2| 7.1| –35.0| –19
1995 MHz| 18.2| 31.8| 6.9| –35.0| –12
### 1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 63 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- * | **IRL
- .
- *
\---|---|---|---|---|---
1805 MHz| 18.0| 33.3| 7.1| –35.0| –13
1840 MHz| 18.2| 32.7| 7.1| –35.0| –16
1880 MHz| 18.3| 32.6| 7.1| –34.0| –13