AFT18S260W31SR3

AIRFAST RF POWER LDMOS TRANSISTORS 1805-1995MHz, 50W AVG. 28V

Overview

The and AFT18S260W31GSR3 50 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz.

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## Features

* Designed for Wide Instantaneous Bandwidth Applications

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions

* Optimized for Doherty Applications

* RoHS Compliant

## Features RF Performance Tables

### 1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1800 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1805 MHz| 19.4| 27.2| 7.1| –35.2| –11

1840 MHz| 19.3| 28.0| 7.1| –35.0| –24

1880 MHz| 19.6| 29.3| 7.0| –34.0| –14

### 1900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1800 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1930 MHz| 19.0| 25.1| 6.8| –34.2| –20

1960 MHz| 19.3| 25.6| 6.9| –34.5| –18

1995 MHz| 19.6| 26.6| 6.8| –33.9| –12