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AFT26H050W26SR3

数据手册.pdf
NXP(恩智浦) 分立器件

RF Power Transistor,2496 to 2690MHz, 42W, Typ Gain in dB is 14.2 @ 2690MHz, 28V, LDMOS, SOT1797

Overview

The AFT26HW050SR3, AFT26HW050GSR3 and 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

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## Features

* Advanced High Performance In-Package Doherty

* Designed for Wide Instantaneous Bandwidth Applications

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction System

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250, 44 mm Tape Width, 13-inch Reel.

## Features RF Performance Table

### 2600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 100 mA, VGSB = 1.4 Vdc, Pout = 9 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
*

\---|---|---|---|---

2620 MHz| 14.9| 48.6| 7.9| –28.4

2655 MHz| 14.6| 48.3| 7.9| –32.6

2690 MHz| 14.2| 47.1| 7.8| –37.3

AFT26H050W26SR3中文资料参数规格
技术参数

频率 2496MHz ~ 2690MHz

额定电流 10 µA

无卤素状态 Halogen Free

输出功率 9 W

增益 14.2 dB

测试电流 100 mA

工作温度Max 225 ℃

工作温度Min -40 ℃

额定电压 28 VDC

电源电压 28 V

封装参数

安装方式 Surface Mount

引脚数 9

封装 NI-780S-4L4L-8

外形尺寸

封装 NI-780S-4L4L-8

物理参数

工作温度 -40℃ ~ 225℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

AFT26H050W26SR3引脚图与封装图
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