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A2T23H300-24SR6

数据手册.pdf
NXP(恩智浦) 主动器件

RF Power Transistor,2300 to 2400MHz, 275W, Typ Gain in dB is 14.9 @ 2300MHz, 28V, LDMOS, SOT1800

Overview

The 66 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.

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## Features

* Advanced High Performance In-Package Doherty

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

## Features RF Performance Table

### 2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 750 mA, VGSB = 0.7 Vdc, Pout = 66 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **ηD
%
.
* | **Output PAR
dB
.
* | **ACPR
dBc
.
*

\---|---|---|---|---

2300 MHz| 14.9| 46.7| 7.8| –34.0

2350 MHz| 15.1| 46.5| 7.8| –35.6

2400 MHz| 15.1| 46.4| 7.5| –34.6

A2T23H300-24SR6中文资料参数规格
技术参数

频率 2.3 GHz

输出功率 66 W

增益 14.9 dB

测试电流 750 mA

额定电压 65 V

电源电压 28 V

封装参数

引脚数 7

封装 NI-1230-4LS2L

外形尺寸

封装 NI-1230-4LS2L

物理参数

工作温度 -40℃ ~ 225℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

A2T23H300-24SR6引脚图与封装图
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A2T23H300-24SR6 NXP 恩智浦 RF Power Transistor,2300 to 2400MHz, 275W, Typ Gain in dB is 14.9 @ 2300MHz, 28V, LDMOS, SOT1800 搜索库存