A2T23H300-24SR6
数据手册.pdfNXP(恩智浦)
主动器件
RF Power Transistor,2300 to 2400MHz, 275W, Typ Gain in dB is 14.9 @ 2300MHz, 28V, LDMOS, SOT1800
Overview
The 66 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.
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## Features
* Advanced High Performance In-Package Doherty
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems
* RoHS Compliant
## Features RF Performance Table
### 2300 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 750 mA, VGSB = 0.7 Vdc, Pout = 66 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- *
\---|---|---|---|---
2300 MHz| 14.9| 46.7| 7.8| –34.0
2350 MHz| 15.1| 46.5| 7.8| –35.6
2400 MHz| 15.1| 46.4| 7.5| –34.6