ALD1105PBL
数据手册.pdfMOSFET 2N+2P 13.2V 14PDIP
GENERAL DESCRIPTION
The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with " enhanced ACMOS silicon gate CMOS process. It consists of an ALD1116 N-channel MOSFET pair and an ALD1117 P-channel MOSFET pair in one package. The ALD1105 is a low drain current, low leakage current version of the ALD1103.
FEATURES
• Thermal tracking between N-channel and P-channel pairs
• Low threshold voltage of 0.7V for both N-channel & P-channel MOSFETs
• Low input capacitance
• Low Vos -- 10mV
• High input impedance -- 1013 Ω typical
• Low input and output leakage currents
• Negative current IDS temperature coefficient
• Enhancement mode normally off
• DC current gain 109
• Matched N-channel pair and matched P-channel pair in one package