锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

ALD1105PBL

ALD1105PBL

数据手册.pdf
Advanced Linear Devices 先进线性电子 分立器件

MOSFET 2N+2P 13.2V 14PDIP

GENERAL DESCRIPTION

The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications.  These enhancement-mode transistors are manufactured with " enhanced ACMOS silicon gate CMOS process.  It consists of an ALD1116 N-channel MOSFET pair and an ALD1117  P-channel MOSFET pair in one package. The ALD1105 is a low drain current, low leakage  current version of the ALD1103.

FEATURES

• Thermal tracking between N-channel and P-channel pairs

• Low threshold voltage of 0.7V for both N-channel & P-channel MOSFETs

• Low input capacitance

• Low Vos -- 10mV

• High input impedance -- 1013 Ω typical

• Low input and output leakage currents

• Negative current IDS temperature coefficient

• Enhancement mode normally off

• DC current gain 109

• Matched N-channel pair and matched P-channel pair in one package

ALD1105PBL中文资料参数规格
技术参数

通道数 4

漏源极电阻 350 Ω, 1.20 kΩ

极性 N-Channel, P-Channel

耗散功率 500 mW

漏源极电压Vds 10.6 V

漏源击穿电压 ±12 V

栅源击穿电压 13.2 V

输入电容Ciss 3pF @5VVds

额定功率Max 500 mW

工作温度Max 70 ℃

工作温度Min 0 ℃

封装参数

安装方式 Through Hole

封装 PDIP-14

外形尺寸

封装 PDIP-14

物理参数

工作温度 0℃ ~ 70℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

ALD1105PBL引脚图与封装图
ALD1105PBL引脚图

ALD1105PBL引脚图

ALD1105PBL封装图

ALD1105PBL封装图

ALD1105PBL封装焊盘图

ALD1105PBL封装焊盘图

在线购买ALD1105PBL
型号 制造商 描述 购买
ALD1105PBL Advanced Linear Devices 先进线性电子 MOSFET 2N+2P 13.2V 14PDIP 搜索库存