74CB3Q3245RGYRG4
8位FET总线开关2.5 -V / 3.3 V低压高带宽总线开关 8-BIT FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH
DESCRIPON/ORDERING INFORMATION
The SN74CB3Q3245 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance ron. The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output I/O ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3245 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
FEATURES
• High-Bandwidth Data Path up to 500 MHz 1
• Equivalent to IDTQS3VH384 Device
• 5-V Tolerant I/Os With Device Powered Up or Powered Down
• Low and Flat ON-State Resistance ron Characteristics Over Operating Range ron = 4 Ω Typ
• Rail-to-Rail Switching on Data I/O Ports
– 0- to 5-V Switching With 3.3-V VCC
– 0- to 3.3-V Switching With 2.5-V VCC
• Bidirectional Data Flow With Near-Zero Propagation Delay
• Low Input/Output Capacitance Minimizes Loading and Signal Distortion CioOFF = 3.5 pF Typ
• Fast Switching Frequency fOE = 20 MHz Max
• Data and Control Inputs Provide Undershoot Clamp Diodes
• Low Power Consumption ICC = 1 mA Typical
• VCC Operating Range From 2.3 V to 3.6 V
• Data I/Os Support 0- to 5-V Signaling Levels
0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V
• Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
• Ioff Supports Partial-Power-Down Mode Operation
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model A114-B, Class II
– 1000-V Charged-Device Model C101
• Supports Both Digital and Analog
Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
