AT-32033-TR1
数据手册.pdfAT-32033-TR1 NPN三极管 11V 32 mA 5GHz 70~300 2.7V SOT-23/SC-59 marking/标记 320
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 11V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 5.5V 集电极连续输出电流ICCollector CurrentIC| 32 mA 截止频率fTTranstion FrequencyfT| 5GHz 直流电流增益hFEDC Current GainhFE| 70~300 管压降VCE(sat)Collector-Emitter Saturation Voltage| 2.7V 耗散功率PcPower Dissipation| 200mW/0.2W Description & Applications| Low Current, High Performance NPN Silicon Bipolar Transistor Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA AT-32033: 1 dB NF, 12.5 dB GA • Characterized for End-OfLife Battery Use 2.7 V • SOT-23 and SOT-143 SMT Plastic Packages • Tape-And-Reel Packaging Option Available 描述与应用| 低电流,高性能 NPN硅双极晶体管 特点 •高性能双极晶体管优化 低电流,低电压操作 •900兆赫绩效: AT-32011:1分贝,14分贝(NF)GA AT-32033:1分贝,12.5分贝(NF)GA •其特点为的最终OfLife电池使用(2.7 V) •SOT-23和SOT-143 SMT塑料封装 •磁带和卷轴包装选项可用