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NTMFS5832NLT1G

NTMFS5832NLT1G

数据手册.pdf
ON Semiconductor 安森美 分立器件

N 通道功率 MOSFET,40V,ON Semiconductor### MOSFET 晶体管,ON Semiconductor

N 通道功率 MOSFET,40V,

### MOSFET ,ON Semiconductor


得捷:
MOSFET N-CH 40V 20A/111A 5DFN


立创商城:
N沟道 40V 111A


欧时:
ON Semiconductor Si N沟道 MOSFET NTMFS5832NLT1G, 110 A, Vds=40 V, 8引脚 SO-8FL封装


贸泽:
MOSFET NFET SO8FL 40V 110A 4.2MO


艾睿:
Compared to traditional transistors, NTMFS5832NLT1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.


Allied Electronics:
NTMFS5832NLT1G N-channel MOSFET Transistor, 110 A, 40 V, 8-Pin SO-8FL


安富利:
Trans MOSFET N-CH 40V 20A 8-Pin DFN EP T/R


Chip1Stop:
Trans MOSFET N-CH 40V 20A 5-Pin4+Tab SO-FL T/R


Verical:
Trans MOSFET N-CH 40V 20A 5-Pin4+Tab SO-FL T/R


Newark:
# ON SEMICONDUCTOR  NTMFS5832NLT1G  MOSFET Transistor, N Channel, 20 A, 40 V, 0.0031 ohm, 10 V, 3 V


力源芯城:
110A,40V,N沟道MOSFET


DeviceMart:
MOSFET N-CH 40V 110A SO-8FL


NTMFS5832NLT1G中文资料参数规格
技术参数

漏源极电阻 0.0031 Ω

极性 N-Channel

耗散功率 3.1 W

阈值电压 3 V

漏源极电压Vds 40 V

上升时间 24 ns

输入电容Ciss 2700pF @25VVds

额定功率Max 3.1 W

下降时间 8 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 3.1W Ta, 96W Tc

封装参数

安装方式 Surface Mount

引脚数 5

封装 SO-FL-8

外形尺寸

长度 5.1 mm

宽度 6.1 mm

高度 1.1 mm

封装 SO-FL-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

NTMFS5832NLT1G引脚图与封装图
NTMFS5832NLT1G引脚图

NTMFS5832NLT1G引脚图

NTMFS5832NLT1G封装焊盘图

NTMFS5832NLT1G封装焊盘图

在线购买NTMFS5832NLT1G
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