NESG2021M05-T1

nesg2021m05-t1 NPN三极管 13V 35mA 20Mhz~25Mhz 130~260 sot-343 marking/标记 T1G 高频三极管

•"s NPN SiGe HIGH FREQUENCY TRANSISTOR HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz • LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance • Pb Free

Win Source:
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification